Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor‐Based FETs for Visual Simulation

Abstract Controlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor‐based field‐effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g., α‐In 2 Se 3 ). Multiple conductance states are achieved in α‐In 2 Se 3 ‐based FeSFETs by controlling the ferroelectric polarization. The on/off current ratio (I on /I off ) is ≈10 5 with a dark current of ≈10 −11 A by applying a single positive gate voltage pulse. Moreover, the device shows excellent endurance and retention performance. In a further step, the carrier transports and corresponding physics mechanism in various polarization states are studied by using Kelvin probe force microscopy (KPFM) and optoelectronic measurements. Finally, the α‐In 2 Se 3 ‐based FETs can be trained. It can recognize handwritten digit images from MNIST dataset with a successful recognition accuracy of ≈95.5%. This work provides a new design idea and theoretical support for advanced optoelectronic devices in the field of in‐memory sensing and computing.