Charge Reservoirs in an Expanded Halide Perovskite Analog: Enhancing High‐Pressure Conductivity through Redox‐Active Molecules

As halide perovskites and their derivatives are being developed for numerous optoelectronic applications, controlling their electronic doping remains a fundamental challenge. Herein, we describe a novel strategy of using redox-active organic molecules as stoichiometric electron acceptors. The cavities in the new expanded perovskite analogs (dmpz)[Sn₂ X₆ ], (X=Br^- (1Br) and I^- (1I)) are occupied by dmpz²⁺ (N,N'-dimethylpyrazinium), with the LUMOs lying ca. 1 eV above the valence band maximum (VBM). Compressing the metal-halide framework drives up the VBM in 1I relative to the dmpz LUMO. The electronic conductivity increases by a factor of 10⁵ with pressure, reaching 50(17) S cm^-1 at 60 GPa, exceeding the high-pressure conductivities of most halide perovskites. This conductivity enhancement is attributed to an increased hole density created by dmpz²⁺ reduction. This work elevates the role of organic cations in 3D metal-halides, from templating the structure to serving as charge reservoirs for tuning the carrier concentration.