抵抗
平版印刷术
光刻
材料科学
纳米技术
电子束光刻
单层
下一代光刻
半导体
纳米光刻
光电子学
作者
Preeti Poddar,Yu Zhong,Andrew J. Mannix,Fauzia Mujid,Jaehyung Yu,Ce Liang,Jong-Hoon Kang,Myungjae Lee,Saien Xie,Jiwoong Park
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-01-10
标识
DOI:10.1021/acs.nanolett.1c04081
摘要
Photolithography and electron-beam lithography are the most common methods for making nanoscale devices from semiconductors. While these methods are robust for bulk materials, they disturb the electrical properties of two-dimensional (2D) materials, which are highly sensitive to chemicals used during lithography processes. Here, we report a resist-free lithography method, based on direct laser patterning and resist-free electrode transfer, which avoids unintentional modification to the 2D materials throughout the process. We successfully fabricate large arrays of field-effect transistors using MoS2 and WSe2 monolayers, the performance of which reflects the properties of the pristine materials. Furthermore, using these pristine devices as a reference, we reveal that among the various stages of a conventional lithography process, exposure to a solvent like acetone changes the electrical conductivity of MoS2 the most. This new approach will enable a rational design of reproducible processes for making large-scale integrated circuits based on 2D materials and other surface-sensitive materials.
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