石墨烯
氧化物
复合数
材料科学
半导体
氨
渗透(认知心理学)
氧化还原
渗流阈值
化学工程
复合材料
纳米技术
电阻率和电导率
化学
光电子学
电气工程
冶金
有机化学
神经科学
工程类
生物
作者
Qiuxia Feng,Xiaogan Li,Jing Wang
标识
DOI:10.1016/j.snb.2016.12.075
摘要
Abstract Reduced graphene oxide (rGO) was added to SnO2 to implement a room temperature chemoresistive ammonia sensor. The percolation effect of rGO on the ammonia sensing properties of SnO2 based sensor was observed. rGO was added physically to SnO2 followed with a magnetic stirring. The sensor using rGO-SnO2 composites exhibited a switch from an n-type semiconductor response behavior to a p-type semiconductor behavior as the rGO content increased from 0.1 wt% to 1 wt%. The p-type response to ammonia indicated an enhanced sensitivity, better signal stability and faster response/recovery speeds compared to the n-type response. The p-type response can be due to the p-type rGO in the composite and the enhanced room temperature n-type response of SnO2 could be assisted by the added rGO which facilitated the redox reactions of ammonia with oxygen in air. A physical model for prediction of the critical weight ratio of rGO in the composite was developed. The calculated results were reasonably consistent with the experimental ones.
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