发光二极管
量子效率
光电子学
材料科学
量子阱
紫外线
二极管
光学
量子点
半最大全宽
物理
激光器
作者
M. Ajmal Khan,Ryohei Takeda,Yoichi Yamada,Noritoshi Maeda,Masafumi Jo,Hideki Hirayama
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2019-12-04
卷期号:45 (2): 495-495
被引量:36
摘要
AlGaN-based ultraviolet-A (UVA) light-emitting-diodes (LEDs) at emission under 330 nm are of great importance for numerous applications, including medicine and photochemical technologies. In this Letter, a highly relaxed n-AlGaN electron injection layer (EIL) underneath the multi-quantum wells (MQWs) for the suppression of both threading dislocation densities and piezoelectric effect was attempted. When the Ga-rich n-AlGaN EIL in the UVA LED was relaxed up to 75%, the full width at half-maximum values of the X-ray rocking curves for the (10–12) planes were reduced from our previous value of approximately 793 to 564 arcsec. Subsequently, a maximum light power of 3.1 mW was achieved in the 326 nm band UVA LED. However, carrier confinement and transport issues in the MQWs were observed. To resolve these issues of carrier confinement and transport, we provide a short roadmap for experimental efforts to realize an internal quantum efficiency (IQE) beyond 53% in AlGaN UVA-MQWs.
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