薄膜晶体管
频道(广播)
材料科学
图层(电子)
分析化学(期刊)
数学
光电子学
电气工程
化学
纳米技术
色谱法
工程类
作者
Shin-Ho Noh,Hyoeun Kim,Jong‐Heon Yang,Yong-Hae Kim,Young-Ha Kwon,Nak-Jin Seong,Chi‐Sun Hwang,Kyu-Jeong Choi,Sung-Min Yoon
标识
DOI:10.1109/ted.2022.3198032
摘要
In–Ga–Sn–O (IGTO) thin-film transistors (TFTs) were fabricated with channel lengths from $3 \mu \text{m}$ to 500 nm to investigate the short-channel effects (SCEs), in which IGTO channel compositions were modulated during the atomic-layer deposition. The SCEs appearing in the IGTO TFTs were found to be manifested by increasing the In/Ga ratio of IGTO channel, showing typical channel composition dependence. Alternatively, small values of the channel-length reduction and contact resistance could be obtained to be 50 nm and 0.52 $\text{k}\Omega $ , respectively, for the device using the IGTO channel with an In/Ga ratio of 1.7. Threshold voltage shifts of the IGTO TFT were estimated to be only +0.03 and +1.22 V under negative and positive gate-bias stress for 104 s, respectively, even with a channel length as short as $1 \mu \text{m}$ .
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