A Comprehensive Review of Plasma Cleaning Processes Used in Semiconductor Packaging

Semiconductor device fabrication is conducted through highly precise manufacturing processes. An essential component of the semiconductor package is the lead frame on which the silicon dies are assembled. Impurities such as oxides or organic matter on the surfaces have an impact on the process yield. Plasma cleaning is a vital process in semiconductor manufacturing, employed to enhance production yield through precise and efficient surface preparation essential for device fabrication. This paper explores the various facets of plasma cleaning, with a particular emphasis on its application in the cleaning of lead frames used in semiconductor packaging. To provide comprehensive context, this paper also reviews the critical role of plasma in advanced and emerging packaging technologies. This study investigates the fundamental physics governing plasma generation, the design of plasma systems, and the composition of the plasma medium. A central focus of this work is the comparative analysis of different plasma systems in terms of their effectiveness in removing organic contaminants and oxide residues from substrate surfaces. By utilizing reactive species generated within the plasma—such as oxygen radicals, hydrogen ions, and other chemically active constituents—these systems enable a non-contact, damage-free cleaning method that offers significant advantages over conventional wet chemical processes. Additionally, the role of non-reactive species, such as argon, in sputtering processes for surface preparation is examined. Sputtering is the ejection of individual atoms from a target surface due to momentum transfer from an energetic particle (usually an ion). Sputtering is therefore a physical process driven by momentum transfer. Energetic ions, such as argon (Ar+), are accelerated from the plasma to bombard a target surface. Upon impact, these ions transfer sufficient kinetic energy to atoms within the material’s lattice to overcome their surface binding energy, resulting in their physical ejection. This paper also provides a comparative assessment of various plasma sources, including direct current, dielectric barrier discharge, radio frequency, and microwave-based systems, evaluating their suitability and efficiency for lead frame cleaning applications. Furthermore, it addresses critical parameters affecting plasma cleaning performance, such as gas chemistry, power input, pressure regulation, and substrate handling techniques. The ultimate aim of this paper is to provide a concise yet comprehensive resource that equips technical personnel with the essential knowledge required to make informed decisions regarding plasma cleaning technologies and their implementation in semiconductor manufacturing. This paper provides various tables which provide the reader with comparative assessments of the various plasma sources and gases used. Scoring mechanisms are also introduced and utilized in this paper. The scores achieved by both the sources and the plasma gases are then summarized in this paper’s conclusions.