Effect of electron-electron scattering on mobility in GaAs

The influence of electron-electron scattering on mobility in GaAs is studied over the temperature range 80–300 K using the variation principle. The mobilities limited by both polar optic and ionized impurity scattering are reduced more significantly due to electron-electron scattering than those limited by deformation potential acoustic and by piezoelectric scattering. For a carrier concentration of 1016 cm−3, the overall mobility is reduced by about 10% at 80 K.