材料科学
砷化镓
钆镓石榴石
微波食品加热
宽带
光电子学
镓
磁场
核磁共振
图层(电子)
光学
纳米技术
外延
电信
物理
量子力学
计算机科学
冶金
标识
DOI:10.1016/s0304-8853(99)00634-4
摘要
Yittrium iron garnet (YIG)–gadolinium gallium garnet (GGG) and iron (Fe)–gallium arsenide (GaAs) layer structures have been used, respectively, to construct wideband tunable microwave bandstop filters of the flip-chip type and the integrated type. For the former, a frequency tuning range of 2.5–23.0 GHz was accomplished at a magnetic field tuning range of 290–7300 Oe. For the latter, a comparable tuning bandwidth but of significantly higher carrier frequencies of 10.7–32.5 GHz has been achieved at a much lower magnetic field tuning range, namely, 0–4500 Oe. The advantages associated with the Fe-film-based bandstop filters should also accompany other analog microwave devices.
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