共发射极
光伏系统
硅
非晶硅
材料科学
光电子学
能量转换效率
晶体硅
欧姆接触
太阳能电池
基质(水族馆)
电气工程
纳米技术
工程类
图层(电子)
海洋学
地质学
作者
Nadjat Benadla,K. Ghaffour
出处
期刊:International Journal of Electrical and Computer Engineering
[Institute of Advanced Engineering and Science (IAES)]
日期:2019-10-29
卷期号:9 (6): 4566-4566
被引量:7
标识
DOI:10.11591/ijece.v9i6.pp4566-4572
摘要
<p>Solar energy is the most widely shared and abundant source all over the world. This kind of energy is exploited to produce electricity directly by the solar photovoltaic cell. Indeed, silicon photovoltaic cells are the most widely spread technology. In the present article, we reported a numerical simulation of the interdigitated back contact (IBC) solar cell in order to obtain a higher conversion efficiency. The structure was realized on a p-type multi-crystalline silicon substrate, a p+ type amorphous silicon FSF, an n- type amorphous silicon based emitter, and a p- type BSF. The position of the emitter and the BSF were interdigitated and covered with ohmic contacts. The numerical simulation was carried out by SILVACO software under the Atlas module. The surface of structure was of a value of 10 cm<sup>2</sup> under illumination AM1.5g. We studied the effect of the geometrical and the physical parameters of the structure with IBC on the performance of the cell. The optimum obtained conversion efficiency was 20.83%; this result confirms the potential of the heterojunction silicon technology.</p>
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