Real-time full-wafer design-based inter-layer virtual metrology

In this paper we present a powerful virtual metrology system to aid in-fab product lot level dispositioning and yield learning. CD and overlay measurement data of different layers are modeled across the wafers and mapped to dense dose, focus, and overlay grids. These are input processing conditions for design-specific computational lithography to predict on full-wafer, full-chip inter-layer overlap area and critical edge-to-edge distances, which are thereafter used to predict electrical failure. The system is composed of an off-line inter-layer hotspot database and an on-line real time dispositioning module. It supports complex multi-patterning stacks with or without self-aligned processes. Example runs have been conducted for 14 nm node metal and via layers, using both FEM-like and typical nominal production wafer data, and the results are as expected from lithographical point of view. Comparing with traditional wafer dispositioning based on static overlay spec and CD spec, our system outputs wafer map stacked with failed dies locations, worst case hotspots contours, root cause analysis, list of worst hotspots and worst dies for inspection, and help litho engineer make an educated decision on wafer dispositioning. This will help fab optimize CD – Overlay process window, improve yield ramp, reduce wafer rework rate, and hence reduce cost, and shorten turn-around-time. The system's computation is fast and inline real time wafer dispositioning aided by computational lithography is made possible by the system.