可靠性(半导体)
材料科学
光电子学
激光器
制作
功率(物理)
半导体
半导体激光器理论
光学
物理
医学
替代医学
病理
量子力学
作者
仇伯仓 QIU Bo-cang,胡海 MARTIN Hai HU,汪卫敏 WANG Wei-min,刘文斌 LIU Wen-bin,白雪 Bai Xue
出处
期刊:Chinese Optics
[Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences]
日期:2018-01-01
卷期号:11 (4): 590-603
标识
DOI:10.3788/co.20181104.0590
摘要
In this paper, a high efficiency and high reliability 915 nm semiconductor laser is designed and fabricated, which is a key component of the fiber lasers. In order to maximize the electro-optic conversion efficiency of the device, a double asymmetric large-cavity waveguide structure is adopted in the design, and the quantum well structure, waveguide structure, doping, and device structure are systematically optimized. Device simulations show that the device's maximum electro-optical conversion efficiency reaches 67% at an ambient temperature of 25℃. The material is grown by Metal Organic Chemical Vapor Deposition(MOCVD), and a laser chip having a light emitting region width of 95 μm and a cavity length of 4.8 mm is prepared. Tests show that the efficiency of the packaged device and other parameter indices have reached the advanced level of similar devices in the world. In the case that the threshold current is 1 A at room temperature, the slope efficiency is 1.18 W/A, the maximum electro-optic conversion efficiency is 66.5%, the output power is 12 W, and the electro-optical conversion efficiency reaches 64.3%. It can be seen that the test results are in good agreement with that of the device theory simulation. After approximately 6 000 hours of long-life accelerated testing, the device power does not attenuate, indicating that the produced high-power 915 nm laser chip has very high reliability.
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