坩埚(大地测量学)
极限氧浓度
微下拉
硅
横截面
熔体流动指数
材料科学
体积流量
Crystal(编程语言)
氧气
增长率
晶体生长
分析化学(期刊)
结晶学
矿物学
化学
物理
机械
复合材料
冶金
数学
几何学
工程类
计算机科学
有机化学
共聚物
程序设计语言
聚合物
色谱法
计算化学
结构工程
作者
Jyh Chen Chen,Pei Yi Chiang,Thi Hoai Thu Nguyen,Chieh Hu,Chun Hung Chen,Chien Cheng Liu
标识
DOI:10.1016/j.jcrysgro.2016.03.024
摘要
A three-dimensional simulation model is used to study the oxygen concentration distribution in silicon crystal during the Czochralski growth process under a transverse uniform magnetic field. The flow, temperature, and oxygen concentration distributions inside the furnace are calculated for different crystal lengths. There is significant variation in the flow structure in the melt with the growth length. The results show that in the initial stages, there is a decrease in the oxygen concentration at the crystal-melt interface as the length of the growing crystal increases. As the crystal lengthens further, a minimum value is reached after which the oxygen concentration increases continuously. This trend is consistent with that shown in the experimental results. The variation of the oxygen concentration with the growth length is strongly related to the depth of the melt in the crucible and the flow structure inside the melt. Better uniformity of the axial oxygen concentration can be achieved by proper adjustment of the crucible rotation rate during the growth process.
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