Aspartame Endowed ZnO-Based Self-Healing Solid Electrolyte Interface Film for Long-Cycling and Wide-Temperature Aqueous Zn-Ion Batteries

法拉第效率 电解质 材料科学 化学工程 水溶液 阳极 超亲水性 腐蚀 电极 化学 冶金 润湿 复合材料 有机化学 物理化学 工程类
作者
Yunyu Shi,Yingkang Liu,Ruirui Chang,Guilin Zhang,Yuqing Rang,Zheng‐Long Xu,Qi Meng,Penghui Cao,Xiangyang Zhou,Jingjing Tang,Juan Yang
出处
期刊:Nano-micro Letters [Springer Science+Business Media]
卷期号:17 (1)
标识
DOI:10.1007/s40820-025-01765-6
摘要

Abstract Metallic Zn anodes suffer from hydrogen evolution and dendritic deposition in aqueous electrolytes, resulting in low Coulombic efficiency and poor cyclic stability for aqueous Zn-ion batteries (AZIBs). Constructing stable solid electrolyte interphase (SEI) with strong affinity for Zn and exclusion of water corrosion of Zn metal anodes is a promising strategy to tackle these challenges. In this study, we develop a self-healing ZnO-based SEI film on the Zn electrode surface by employing an aspartame (APM) as a versatile electrolyte additive. The hydrophobic nature and strong Zn affinity of APM can facilitate the dynamic self-healing of ZnO-based SEI film during cyclic Zn plating/stripping process. Benefiting from the superior protection effect of self-healing ZnO-based SEI, the Zn║Cu cells possess an average coulombic efficiency more than 99.59% over 1,000 cycles even at a low current density of 1 mA cm −2 − 1 mAh cm −2 . Furthermore, the Zn║NH 4 + -V 2 O 5 full cells display a large specific capacity of 150 mAh g −1 and high cyclic stability with a capacity retention of 77.8% after 1,750 cycles. In addition, the Zn║Zn cell delivers high temperature adaptability at a wide-temperature range from − 5 to 40 °C even under a high DOD of 85.2%. The enhanced capability and durability originate from the self-healing SEI formation enabled by multifunctional APM additives mediating both corrosion suppression and interfacial stabilization. This work presents an inspired and straightforward approach to promote a dendrite-free and wide-temperature rechargeable AZIBs energy storage system.

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