镓
铟
材料科学
铜
太阳能电池
硒化铜铟镓太阳电池
光电子学
冶金
作者
Jan Keller,Klara Kiselman,Olivier Donzel‐Gargand,Natalia Martin,Melike Babucci,Olle Lundberg,Erik Wallin,Lars Stolt,Marika Edoff
标识
DOI:10.1038/s41560-024-01472-3
摘要
Abstract Chalcopyrite-based solar cells have reached an efficiency of 23.35%, yet further improvements have been challenging. Here we present a 23.64% certified efficiency for a (Ag,Cu)(In,Ga)Se 2 solar cell, achieved through the implementation of a series of strategies. We introduce a relatively high amount of silver ([Ag]/([Ag] + [Cu]) = 0.19) into the absorber and implement a ‘hockey stick’-like gallium profile with a high concentration of Ga close to the molybdenum back contact and a lower, constant concentration in the region closer to the CdS buffer layer. This kind of elemental profile minimizes lateral and in-depth bandgap fluctuations, reducing losses in open-circuit voltage. In addition, the resulting bandgap energy is close to the local optimum of 1.15 eV. We apply a RbF post-deposition treatment that leads to the formation of a Rb–In–Se phase, probably RbInSe 2 , passivating the absorber surface. Finally, we discuss future research directions to reach 25% efficiency.
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