Realizing Fluorescence Blinking in Monolayer MoSe2 with the Formation of 1D/2D Heterostructure

Abstract The understanding and manipulating of photoluminescence blinking is essential in nano‐photonics and related device applications. The formation of mixed‐dimensional semiconductor heterostructures provides an important platform for the generation of blinking phenomena, which can be utilized to realize quantum emission properties of the heterostructures that are beyond the pure single material. Here, one‐dimensional (1D)/two‐dimensional (2D) heterostructures consisting of MoSe 2 monolayer and a single CsPbBr 3 perovskite nanowire are constructed. By studying the photoluminescence (PL) intensity time trajectory and lifetime, MoSe 2 in heterostructure exhibits fluorescent blinking behavior, which has a negative correlation relation with the PL blinking in CsPbBr 3 nanowire due to its super‐trap states. The excitation power dependent blinking and PL lifetime measurements of the heterostructure, as well as the low‐temperature PL spectroscopy, are performed to conclude that the bright state of MoSe 2 in heterostructure is due to the suppressed interfacial charge transfer. In addition, MoSe 2 /hBN/PVK heterostructure is prepared and investigated, showing no blinking phenomena due to the dominated energy transfer process. This study not only provides a deeper understanding of interfacial charge transfer process in 1D/2D heterostructure, but also offers guidance for the design of photonic device with extended functionality.