材料科学
激光器
包层(金属加工)
光电子学
波导管
光学
制作
半导体激光器理论
波长
光功率
半导体
医学
物理
病理
冶金
替代医学
作者
Jing Guo,Huan Li,X. Xiong,Daibing Zhou,Linhgjuan Zhao,Song Liang
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2024-05-23
卷期号:32 (12): 21663-21663
被引量:1
摘要
1.5 µm wavelength high power buried heterojunction (BH) semiconductor lasers having dilute waveguide structure have been fabricated. The optical field is dragged down toward the n side of the device by the dilute waveguide layer, lowering the optical confinement factor of the p doped material and active material, which helps to enlarge the laser output light power. Compared with thick InGaAsP cladding layer, the dilute waveguide material is easy to be grown and has higher thermal conductivity. The slope efficiency of the obtained dilute waveguide BH lasers is notably higher than that of the BH lasers having no dilute waveguide. Our studies show that the dilute waveguide structure is promising for the fabrication of high power BH lasers.
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