Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon–Oxide–Nitride–Oxide–Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology

This work addresses the characteristics of a nonvolatile polycrystalline-silicon thin-film-transistor silicon–oxide–nitride–oxide–silicon (SONOS) memory with periodical finlike channels fabricated using nanoimprint lithography. The polycrystalline silicon periodical finlike channels were fabricated using ultraviolet (UV) nano-imprint lithography and studied by transmission electron microscopy (TEM). The memories with periodical finlike channels have lower operation voltage, higher programming speed, larger memory window, and better endurance and data retention than those with a single channel. The proposed approach can be utilized to fabricate a high-performance thin-film-transistor memory at a low cost.