三氧化钼
X射线光电子能谱
费米能级
光电发射光谱学
紫外光电子能谱
兴奋剂
钼
掺杂剂
富勒烯
材料科学
薄膜
分析化学(期刊)
化学
纳米技术
光电子学
电子
核磁共振
物理
色谱法
有机化学
冶金
量子力学
作者
Chenggong Wang,Xiaoliang Liu,Congcong Wang,John Kauppi,Yongli Gao
摘要
Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C60 to MoOx and Mo6+ oxides is the basis as hole dopants.
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