紫外线
原子层沉积
光电流
材料科学
辐照
光电子学
蓝宝石
图层(电子)
分析化学(期刊)
光学
纳米技术
化学
物理
色谱法
核物理学
激光器
作者
Chun‐Ying Huang,Guan‐Yu Lin,Yen-Yang Liu,Fu‐Yuan Chang,Pei-Te Lin,Feng-Hsuan Hsu,Yu-Hsiang Peng,Zi-Ling Huang,Tai‐Yuan Lin,Jyh-Rong Gong
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2020-11-03
卷期号:38 (6)
被引量:11
摘要
β-Ga2O3 films are deposited on (0001) sapphire substrates using triethylgallium (TEGa) and nitrous oxide (N2O) under high N2O/TEGa ratios by atomic layer deposition (ALD). Au-β-Ga2O3-Au metal/semiconductor/metal (MSM) solar-blind deep ultraviolet (DUV) photodetectors (PDs) are prepared using Au interdigitated electrodes deposited by thermal evaporation. The ALD-grown β-Ga2O3 films and Au-β-Ga2O3-Au DUV MSM PDs are irradiated with gamma ray to explore the response of gamma irradiation on the β-Ga2O3 films and β-Ga2O3 DUV MSM PDs. It is found that gamma irradiation tends to deteriorate the structural properties of the β-Ga2O3 films and dark current of the β-Ga2O3 DUV MSM PDs. Nevertheless, it also results in an increase in the 254 nm illuminated photocurrent of the Au-β-Ga2O3-Au DUV MSM PD. Energy band diagram schematics of the biased Au-β-Ga2O3-Au DUV MSM PDs are presented to interpret the influence of gamma irradiation-induced defects on the performances of the Au-β-Ga2O3-Au DUV MSM PDs.
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