热导率
二硫化钼
材料科学
之字形的
声子
钼
半导体
石墨烯
纳米管
纳米技术
碳纳米管
凝聚态物理
化学物理
光电子学
复合材料
化学
物理
数学
冶金
几何学
作者
Meng Han,Dengke Ma,Xiaoxiang Yu,Lifa Zhang,Zhi‐Wei Sun,Nuo Yang
标识
DOI:10.1016/j.ijheatmasstransfer.2019.118719
摘要
Single layer molybdenum disulfide (SLMoS2), a semiconductor possesses intrinsic bandgap and high electron mobility, has attracted great attention due to its unique electronic, optical, mechanical and thermal properties. Although thermal conductivity of SLMoS2 has been widely investigated recently, less studies focus on molybdenum disulfide nanotube (MoS2NT). Here, the comprehensive temperature, size and strain effect on thermal conductivity of MoS2NT are investigated. Thermal conductivity is obtained as 16 Wm−1 K−1 at room temperature, and it has a ∼T−1 dependence on temperature from 200 to 400 K and a ∼Lβ dependence on length from 10 to 320 nm. Interestingly, a chirality-dependent strain effect is identified in thermal conductivity of zigzag nanotube, in which the phonon group velocity can be significantly reduced by strain. This work not only provides feasible strategies to modulate the thermal conductivity of MoS2NT, but also offers useful insights into the fundamental mechanisms that govern the thermal conductivity, which can be used for the thermal management of low dimensional materials in optical, electronic and thermoelectrical devices.
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