击穿电压
电压
碳化硅
材料科学
兴奋剂
光电子学
GSM演进的增强数据速率
MOSFET
离子注入
电气工程
电场
物理
计算机科学
晶体管
工程类
电信
复合材料
离子
量子力学
作者
Xiaochuan Deng,Shanshan Gao,Ben Tan,Juntao Li,Xuan Li,Chengzhan Li,Wanjun Chen,Zhaoji Li,Chao Zhang
出处
期刊:IEEE Journal of Emerging and Selected Topics in Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2019-09-01
卷期号:7 (3): 1505-1512
被引量:5
标识
DOI:10.1109/jestpe.2019.2910610
摘要
An area efficient multizone gradient-modulated guard ring (MGM-GR) edge termination technique is proposed, fabricated, and analyzed for 10-kV class silicon carbide devices without extra process steps or masks, which provides a better tradeoff between near ideal blocking capabilities and technological process complexity. The edge termination region is divided into multiple zones by employing MGMGR technique, which forms a similar linearly graded doping profile to relieve the amount of electric field crowding at the periphery of the active area and achieve a maximum blocking voltage with wide tolerance to implantation dose. The proposed device shows not less than a 35% reduction in edge termination area in comparison with a conventional equally spaced ring at a breakdown voltage of 10 kV. Moreover, MGM-GR shows good tolerances to breakdown voltage for total implant dose and interface charges. With the application of MGM-GR technique to SiC MOSFET with a 100-μm-thick N- epilayer doped to 5 × 1014 cm -3 , the measured breakdown voltage is 13.6 kV at 10 μA. This voltage is nearly 95% of the theoretical value calculated for a 1-D structure. Simulated and measured characteristics show that MGM-GR structure is a candidate for an ultrahigh voltage power device to maximize power density and driving down system complexity.
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