记忆电阻器
极性(国际关系)
异或门
电阻随机存取存储器
电压
计算机科学
电子工程
数学
作者
Fenghu Jiang,Fang Yuan,Yuxia Li
标识
DOI:10.1140/epjs/s11734-021-00345-0
摘要
This brief proposes a new XOR circuit structure which contains a first-order generalized memristor, a voltage follower and a difference amplifier. The first-order generalized memristor model exhibits different dynamic behaviors with different input voltages. The non-polarity of the generalized memristor is proved through comparative analysis of the mathematical model and physical structure of the generalized memristor. Based on the non-polarity of the generalized memristor, the XOR circuit is designed and implemented using hardware. The influence with respect to the parameters of the generalized memristor on the circuit characteristics is discussed.
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