期刊:Electronics Letters [Institution of Engineering and Technology] 日期:1985-01-01卷期号:21 (21): 953-953被引量:123
标识
DOI:10.1049/el:19850673
摘要
The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.