三甲基铟
双层
材料科学
外延
铟
平坦度(宇宙学)
光电子学
纳米化学
纳米技术
金属有机气相外延
图层(电子)
化学
生物化学
物理
宇宙学
量子力学
膜
作者
Junlan Zhou,Qiangcan Huang,Jinchai Li,Duanjun Cai,Junyong Kang
标识
DOI:10.1186/1556-276x-9-5
摘要
The method of In bilayer pre-deposition and penetrated nitridation had been proposed, which had been proven to have many advantages theoretically. To study the growth behavior of this method experimentally, various pulse times of trimethylindium supply were used to get the optimal indium bilayer controlling by metalorganic vapour phase epitaxy. The results revealed that the InN film quality became better as the thickness of the top indium atomic layers was close to bilayer. A following tuning of nitridation process enhanced the quality of InN film further, which means that a moderate, stable, and slow nitridation process by NH3 flow also plays the key role in growing better-quality InN film. Meanwhile, the biaxial strain of InN film was gradually relaxing when the flatness was increasingly improved.
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