铁磁性
凝聚态物理
锰
磁性半导体
居里温度
半导体
齐纳二极管
自旋(空气动力学)
材料科学
居里
过渡金属
化学
物理
光电子学
冶金
电压
热力学
量子力学
晶体管
催化作用
生物化学
作者
T. Dietl,Hideo Ohno,F. Matsukura,J. Cibert,D. Ferrand
出处
期刊:Science
[American Association for the Advancement of Science]
日期:2000-02-11
卷期号:287 (5455): 1019-1022
被引量:7355
标识
DOI:10.1126/science.287.5455.1019
摘要
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature ( T C ) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T C of Ga 1− x Mn x As and that of its II-VI counterpart Zn 1− x Mn x Te and is used to predict materials with T C exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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