超快激光光谱学
材料科学
光活性层
光谱学
光致发光
扩散
带隙
光电子学
载流子寿命
钙钛矿(结构)
载流子
重组
化学物理
分析化学(期刊)
分子物理学
化学
太阳能电池
物理
结晶学
聚合物太阳能电池
硅
色谱法
基因
量子力学
生物化学
热力学
作者
Jafar I. Khan,Furkan H. Isikgor,Esma Ugur,Waseem Raja,George T. Harrison,Emre Yengel,Thomas D. Anthopoulos,Stefaan De Wolf,Frédéric Laquai
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2021-11-01
卷期号:6 (12): 4155-4164
被引量:21
标识
DOI:10.1021/acsenergylett.1c01931
摘要
Carrier recombination at the interface between charge extraction layers and the perovskite photoactive layer in solar cells reduces the quasi-Fermi level splitting (QFLS) and hence the device's open-circuit voltage (VOC). Distinguishing between interfacial carrier recombination and charge extraction requires selective probing of carrier dynamics with transient optical spectroscopy techniques. However, bulk recombination, interfacial recombination, and charge extraction all contribute to the transient response, making a precise determination of individual rates challenging. Here, we compare two commonly used hole transport layers (HTLs), namely, PTAA and NiOx, adjacent to prototypical MAPI3 perovskite photoactive layers and wide-bandgap perovskites. We demonstrate that combining time-resolved photoluminescence (TR-PL) and transient absorption (TA) spectroscopy measurements can reveal recombination losses associated with the perovskite/NiOx interface, as confirmed by drift-diffusion simulations. The best performing MAPI3/PTAA-based device exhibits less nonradiative recombination and more efficient charge extraction, facilitated by favorable energy level alignment.
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