理想(伦理)
曲面(拓扑)
砷
材料科学
锗
图层(电子)
对称(几何)
原子物理学
凝聚态物理
物理
纳米技术
硅
几何学
光电子学
冶金
哲学
认识论
数学
作者
R. D. Bringans,R. I. G. Uhrberg,R. Z. Bachrach,John E. Northrup
标识
DOI:10.1103/physrevlett.55.533
摘要
Arsenic interaction with the Ge(111) surface results in the replacement of the outer Ge layer with an As layer. This system has a 1\ifmmode\times\else\texttimes\fi{}1 symmetry and the calculated positions of the As atoms are very close to the positions expected from bulk bond lengths. Ge(111):As is thus a model ideal surface and a comparison is made of an experimental and a theoretical determination of its fully occupied surface band.
科研通智能强力驱动
Strongly Powered by AbleSci AI