记忆电阻器
记忆晶体管
内容寻址存储器
电阻随机存取存储器
计算机科学
图像(数学)
可靠性(半导体)
双向联想存储器
材料科学
人工神经网络
异步通信
神经形态工程学
计算机硬件
电子工程
人工智能
电气工程
电压
功率(物理)
计算机网络
物理
量子力学
工程类
作者
Ying Zhou,Huaqiang Wu,Bin Gao,Wei Wu,Yue Xi,Peng Yao,Shuanglin Zhang,Qingtian Zhang,He Qian
标识
DOI:10.1002/adfm.201900155
摘要
Abstract Associative memory is one of the significant characteristics of the biological brain. However, it has yet to be realized in a large memristor array due to the high requirements on the memristor device. In this work, the multilevel memristor cell is optimized by employing an electro‐thermal modulation layer. Memristor devices show both high resistance, cell‐to‐cell uniformity, and multilevel resistive switching behaviors with good reliability. A Hopfield neural network is experimentally demonstrated on a 1k memristor array that is capable of realizing the associative memory function for emotion image recovery. By using both asynchronous and synchronous refresh schemes, complete emotion images can be recalled from partial information.
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