材料科学
单层
光电子学
光电探测器
光致发光
响应度
表面等离子体子
等离子体子
光电流
半导体
表面等离子共振
局域表面等离子体子
光探测
异质结
带隙
二硫化钼
发光
表面等离子体激元
纳米技术
作者
Zhiqian Wu,Jing-Liang Yang,Nallappagar K. Manjunath,Yue-Jiao Zhang,Sirui Feng,Yanghua Lu,Jianghong Wu,Wei-Wei Zhao,Caiyu Qiu,Jian-Feng Li,Shisheng Lin
标识
DOI:10.1002/adma.201706527
摘要
2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a "gap-mode" plasmon-enhanced monolayer MoS2 fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS2 . With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS2 fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W-1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS2 photodetectors.
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