材料科学
光电子学
电介质
双极扩散
晶体管
有机电子学
有机半导体
基质(水族馆)
聚合物
有机场效应晶体管
偏压
阈值电压
聚偏氟乙烯
场效应晶体管
电压
电气工程
复合材料
海洋学
物理
地质学
工程类
等离子体
量子力学
作者
Ahmed Albeltagi,Katherine Gallegos-Rosas,Caterina Soldano
出处
期刊:Materials
[MDPI AG]
日期:2021-12-11
卷期号:14 (24): 7635-7635
被引量:4
摘要
Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. In this work, we demonstrate how engineering the dielectric layer based on high-k polyvinylidene fluoride (PVDF)-based polymers can lead to a drastic reduction of device driving voltages and the improvement of its optoelectronic properties. We first investigated the morphology and the dielectric response of these polymer dielectrics in terms of polymer (P(VDF-TrFE) and P(VDF-TrFE-CFE)) and solvent content (cyclopentanone, methylethylketone). Implementing these high-k PVDF-based dielectrics enabled low-bias ambipolar organic light emitting transistors, with reduced threshold voltages (<20 V) and enhanced light output (compared to conventional polymer reference), along with an overall improvement of the device efficiency. Further, we preliminary transferred these fluorinated high-k dielectric films onto a plastic substrate to enable flexible light emitting transistors. These findings hold potential for broader exploitation of the OLET platform, where the device can now be driven by commercially available electronics, thus enabling flexible low-bias organic electronic devices.
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