十字线
系列(地层学)
光学
平版印刷术
光学接近校正
电子束光刻
德拉姆
错误检测和纠正
电子
物理
数学
计算物理学
材料科学
算法
几何学
抵抗
光电子学
量子力学
纳米技术
薄脆饼
生物
古生物学
图层(电子)
作者
Takashi Kamikubo,Takayuki Abe,Susumu Oogi,Hiroto Anze Hiroto Anze,Mitsuko Shimizu,Masamitsu Itoh,Tetsuro Nakasugi,Tadahiro Takigawa,Tomohiro Iijima,Yoshiaki Hattori,Toru Tojo
摘要
A new formula for proximity effect correction is discussed. The formula is represented by a series expansion. When infinite terms are used, the formula gives accurate optimum correction doses. The correction accuracy of the new formula is evaluated for the worst case scenario and compared with the conventional formula. It is shown that (1) the new formula suppresses correction errors to less than 0.5% for the deposited energy and (2) dimensional errors are less than 4 nm, even if only the first 3 terms are calculated for critical patterns. By using the new formula, the proximity effect correction can be carried out with sufficient accuracy, even for making reticles of 1 Gbit or higher-capacity DRAMs.
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