Heavily Doped p‐Type PbSe with High Thermoelectric Performance: An Alternative for PbTe

材料科学 热电效应 兴奋剂 功勋 光电子学 热电材料 带隙 工程物理 复合材料 热导率 热力学 物理
作者
Heng Wang,Yanzhong Pei,Aaron D. LaLonde,G. Jeffrey Snyder
出处
期刊:Advanced Materials [Wiley]
卷期号:23 (11): 1366-1370 被引量:500
标识
DOI:10.1002/adma.201004200
摘要

Advanced MaterialsVolume 23, Issue 11 p. 1366-1370 Communication Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe Heng Wang, Heng Wang Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USASearch for more papers by this authorYanzhong Pei, Yanzhong Pei Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USASearch for more papers by this authorAaron D. LaLonde, Aaron D. LaLonde Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USASearch for more papers by this authorG. Jeffrey Snyder, Corresponding Author G. Jeffrey Snyder [email protected] Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USADepartment of Materials Science, California Institute of Technology, Pasadena, CA 91125, USA.Search for more papers by this author Heng Wang, Heng Wang Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USASearch for more papers by this authorYanzhong Pei, Yanzhong Pei Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USASearch for more papers by this authorAaron D. LaLonde, Aaron D. LaLonde Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USASearch for more papers by this authorG. Jeffrey Snyder, Corresponding Author G. Jeffrey Snyder [email protected] Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USADepartment of Materials Science, California Institute of Technology, Pasadena, CA 91125, USA.Search for more papers by this author First published: 10 February 2011 https://doi.org/10.1002/adma.201004200Citations: 426Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe. Citing Literature Volume23, Issue11March 18, 2011Pages 1366-1370 RelatedInformation
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