氢
中心(范畴论)
物理
顺磁性
结晶学
原子物理学
凝聚态物理
化学
量子力学
作者
James H. Stathis,E. Cartier
标识
DOI:10.1103/physrevlett.72.2745
摘要
We have investigated the reaction of atomic hydrogen with defects at the (100) Si/${\mathrm{SiO}}_{2}$ interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, ${\mathit{P}}_{\mathit{b}0}$ and ${\mathit{P}}_{\mathit{b}1}$, are either passivated or produced by atomic hydrogen, depending on the starting density. However, the two defects possess quantitative differences in behavior. The ${\mathit{P}}_{\mathit{b}0}$ center can be produced more readily than ${\mathit{P}}_{\mathit{b}1}$ and it is also much harder to passivate by atomic hydrogen. These differences between ${\mathit{P}}_{\mathit{b}0}$ and ${\mathit{P}}_{\mathit{b}1}$ help to explain previous observations of ${\mathit{P}}_{\mathit{b}0}$ center generation by radiation and by electrical stress.
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