光电探测器
光电二极管
光电子学
材料科学
微电子
量子点
半导体
红外线的
量子效率
纳米技术
光学
物理
作者
Jason Clifford,Gerasimos Konstantatos,Keith W. Johnston,Sjoerd Hoogland,Larissa Levina,Edward H. Sargent
标识
DOI:10.1038/nnano.2008.313
摘要
Solution-processed semiconductors are compatible with a range of substrates, which enables their direct integration with organic circuits, microfluidics, optical circuitry and commercial microelectronics. Ultrasensitive photodetectors based on solution-process colloidal quantum dots operating in both the visible and infrared have been demonstrated, but these devices have poor response times (on the scale of seconds) to changes in illumination, and rapid-response devices based on a photodiode architecture suffer from low sensitivity. Here, we show that the temporal response of these devices is determined by two components--electron drift, which is a fast process, and electron diffusion, which is a slow process. By building devices that exclude the diffusion component, we are able to demonstrate a >1,000-fold improvement in the sensitivity-bandwidth product of tuneable colloidal-quantum-dot photodiodes operating in the visible and infrared.
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