碳化硅
变压器
电气工程
电子工程
正激变换器
MOSFET
材料科学
工程类
升压变换器
计算机科学
电压
晶体管
冶金
作者
Xinyuan Du,Fei Diao,Zhe Zhao,Yue Zhao
标识
DOI:10.1109/apec42165.2021.9487328
摘要
In this work, a 25 kW all silicon carbide (SiC) series-resonant converter (SRC) design is proposed to enable a single stage dc to dc conversion from 3kV to 540V (±270V) for future electric aircraft applications. The proposed SRC consists of a 3-level neutral-point-clamped (NPC) converter using 3.3kV discrete SiC MOSFETs on the primary side, a H-bridge converter using 900V SiC MOSFET modules on the secondary side and a high frequency (HF) transformer. The detailed design methods for the SRC power stage and the HF transformer are presented. Especially, a tradeoff between the complexity for the cooling system and the need for power density is addressed in the transformer design, leading to a novel multi-layer winding layout. To validate the effectiveness of the proposed SRC design, a converter prototype has been developed and comprehensive experimental studies are performed.
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