纳米片
材料科学
兴奋剂
氢
空位缺陷
铜
光催化
掺杂剂
化学物理
催化作用
纳米技术
结晶学
化学
光电子学
冶金
有机化学
生物化学
作者
Shuqu Zhang,Zhifeng Zhang,Yanmei Si,Bing Li,Fang Deng,Lixia Yang,Xia Liu,Weili Dai,Shenglian Luo
出处
期刊:ACS Nano
[American Chemical Society]
日期:2021-08-19
卷期号:15 (9): 15238-15248
被引量:266
标识
DOI:10.1021/acsnano.1c05834
摘要
It is a challenge to regulate charge flow synergistically at the atomic level to modulate gradient hydrogen migration (H migration) for boosting photocatalytic hydrogen evolution. Herein, a self-adapting S vacancy (Vs) induced with atomic Cu introduction into ZnIn2S4 nanosheets was fabricated elaborately, which can tune charge separation and construct a gradient channel for H migration. Detailed experimental results and theoretical simulations uncover the behavior mechanism of Vs generation with Cu introduction after substituting a Zn atom tendentiously. Cu–S bond shrinkage and Zn–S bond distortion are presented around Vs areas. Besides, Vs induced by Cu introduction lowers the internal electric field to restrain electron transmission between layers, which are enriched on the Vs area because of the lower surface electrostatic potential. Atomic Cu and Vs show a synergistic effect for regulating regional charge separation due to the Cu dopant being a hole trap and Vs being an electron trap. The channels for H migration with gradient ΔGH0 are constructed by different S atom sites, which are modulated by Vs. Gradient H migration driven by a photothermal effect occurs on an identical surface without striding across a heterogeneous interface, which is a valid pathway with lower resistance for boosting H2 release. Ultimately, 5 mol % Cu confined in ZnIn2S4 nanosheets achieves an optimum photocatalytic hydrogen evolution activity of 9.8647 mmol g–1 h–1, which is 14.8 times higher than 0.6640 mmol g–1 h–1 for ZnIn2S4, and apparent quantum efficiency reaches 37.11% at 420 nm. This work demonstrates the behavior mechanism of atomic substitution and provides cognition for hydrogen evolution mechanism deeply.
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