单层
凝聚态物理
材料科学
传输(计算)
失真(音乐)
电荷(物理)
工程物理
化学物理
纳米技术
物理
化学
计算机科学
光电子学
量子力学
并行计算
CMOS芯片
放大器
作者
Zhenyu Liu,Shuang Qiao,Bing Huang,Qiao-Yin Tang,Zi-Heng Ling,Wenhao Zhang,Huinan Xia,Xin Liao,Hu Shi,Wen-Hao Mao,Guilin Zhu,Jing‐Tao Lü,Ying‐Shuang Fu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2021-08-05
卷期号:21 (16): 7005-7011
被引量:34
标识
DOI:10.1021/acs.nanolett.1c02348
摘要
The Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSLs). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the charge transfer state in monolayer 1T-NbSe2, an electronic analogue to TaS2 exempt from interlayer coupling, using spectroscopic imaging scanning tunneling microscopy and first-principles calculations. Monolayer NbSe2 surprisingly displays two types of star of David (SD) motifs with different charge transfer gap sizes, which are interconvertible via temperature variation. In addition, bilayer 1T-NbSe2 shows a Mott collapse by interlayer coupling. Our calculation unveils that the two types of SDs possess distinct structural distortions, altering the effective Coulomb energies of the central Nb orbital. Our calculation suggests that the charge transfer gap, the same parameter for determining the QSL regime, is tunable with strain. This finding offers a general strategy for manipulating the charge transfer state in related systems, which may be tuned into the potential QSL regime.
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