自旋电子学
铁电性
锗
材料科学
半导体
凝聚态物理
自旋极化
自旋霍尔效应
铁磁性
光电子学
硅
物理
电介质
量子力学
电子
作者
Sara Varotto,Luca Nessi,Stefano Cecchi,Jagoda Sławińska,Paul Noël,Simone Petrò,Federico Fagiani,Alessandro Novati,Matteo Cantoni,Daniela Petti,Edoardo Albisetti,Marcio Costa,Raffaella Calarco,Marco Buongiorno Nardelli,Manuel Bibès,Silvia Picozzi,Jean Philippe Attané,Laurent Vila,Riccardo Bertacco,Christian Rinaldi
标识
DOI:10.1038/s41928-021-00653-2
摘要
The development of spintronic devices has been limited by the poor compatibility between semiconductors and ferromagnetic sources of spin. The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. We show that ferroelectric switching by electrical gating is possible in germanium telluride, despite its high carrier density. We also show that spin-to-charge conversion has a similar magnitude to what is observed with platinum, but the charge current sign is controlled by the orientation of ferroelectric polarization. Comparison between theoretical and experimental data suggests that the inverse spin Hall effect plays a major role in switchable conversion. The ferroelectric polarization of epitaxial thin films of germanium telluride can be switched by electrical gating and used to control spin-to-charge conversion.
科研通智能强力驱动
Strongly Powered by AbleSci AI