High-Resistance State Reduction During Initial Cycles of AlOxNy-Based RRAM

In this work, the mechanism of reliability of high resistance state (HRS) in AlO _x N _y -based resistive random access memory (RRAM) has been studied. The Ta/AlO _x N _y /Pt devices with high quality of the Schottky contact in the Ta/AlO _x N _y interface show excellent HRS reliability and low power consumption characteristics. We propose that the resistive switching (RS) process is caused by the migration of oxygen ions in the AlO _x N _y -based RRAM device, and the quality of the metal–semiconductor Schottky contact directly determines HRS reliability in AlO _x N _y -based RRAM.