拓扑绝缘体
自旋电子学
凝聚态物理
物理
纹理(宇宙学)
自旋(空气动力学)
表面状态
拓扑(电路)
自旋工程
自旋极化
电子
铁磁性
曲面(拓扑)
量子力学
几何学
组合数学
图像(数学)
热力学
人工智能
计算机科学
数学
作者
Pimo He,Steven S.-L. Zhang,Dapeng Zhu,Yang Liu,Yi Wang,Jianxing Yu,Giovanni Vignale,Hyunsoo Yang
出处
期刊:Nature Physics
[Springer Nature]
日期:2018-02-05
卷期号:14 (5): 495-499
被引量:110
标识
DOI:10.1038/s41567-017-0039-y
摘要
Surface states of three-dimensional topological insulators exhibit the phenomenon of spin–momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, but the main technique currently available is spin- and angle-resolved photoemission spectroscopy. Here we reveal a close link between the spin texture and a new kind of magnetoresistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magnetoelectric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi2Se3 single layer, we can map both the in-plane and out-of-plane components of the spin texture (the latter arising from hexagonal warping). Theoretical calculations suggest that the bilinear magnetoelectric resistance originates from conversion of a non-equilibrium spin current into a charge current under application of the external magnetic field. A method for resolving the spin texture of the surface state of a topological insulator using a transport measurement is developed. Understanding the spin texture will help engineer spintronic devices.
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