肖特基二极管
反激二极管
二极管
光电子学
材料科学
电气工程
半桥
模拟开关
实现(概率)
集成电路
电压
国家(计算机科学)
工程类
计算机科学
电容器
统计
算法
变压器
数学
反激变压器
作者
Richard Reiner,Patrick Waltereit,Beatrix Weiss,M. Wespel,M. Mikulla,R. Quay,O. Ambacher
出处
期刊:PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
日期:2016-05-10
卷期号:: 1-7
被引量:1
摘要
This work presents the design, realization, and the characterization of a monolithic GaN-on-Si half-bridge circuit with integrated Schottky contacts as freewheeling diodes. The extrinsic- and intrinsic- layouts are realized, analyzed, and compared to other approaches. The high- and low-side switches feature an off-state voltage of 600 V, an on-state resistance of 120 mOmega, and a reverse resistance of below 150 mOmega at corresponding drain currents of 30 A. Furthermore, the switches achieve very low gate-charges of below 5 nC and reverse recovery charges of 12 nC. The on-state- and reverse-state-performances are benchmarked against other state-of-the-art power devices and compared to the theoretical limits.
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