Ultrathin silicon wafer defect detection method based on IR micro-digital holography

Ultrathin silicon wafers are key components of wearable electronic devices and flexible electronics. Defects produced during the preparation process of ultrathin silicon wafers have a great influence on the electronic performance. A high-precision, nondestructive, and rapid damage detection method is urgently needed. IR digital holography has the advantage of being insensitive to visible light and environmental interference. In addition, micro-holography can achieve micro-target scaling with large range scaling. An ultrathin silicon wafer defect detection method of IR micro-digital holography is proposed in this paper for what we believe is the first time. Using the proposed defect detection method based on holography, the detection accuracy reached the submicron level.