材料科学
钻石
硼
碳化硼
氮化硼
金刚石材料性能
兴奋剂
微观结构
微晶
碳化物
人造金刚石
石墨
冶金
复合材料
光电子学
化学
有机化学
作者
Xianxiang Yao,Shengqiang Ma,Wang Chen,Songpeng Zhang,Yanping Huang,Yongsheng Zhao,W.L. Li,Xiaole Zhao,Jian Hao,Pinwen Zhu,Pinwen Zhu,Tian Cui
标识
DOI:10.1016/j.mtcomm.2023.106145
摘要
Boron doped diamond are potential superhard materials with good electric conductivity. In this work, polycrystalline boron doped diamond (p-BDD) with different boron concentration were synthesized from the mixture of graphite and boron carbide under ultra-high pressure (15 GPa) and temperature (2500–2700 K). The results indicate that no more boron atoms can be inserted into diamond when the boron concentration is above 4 at%. The EELS spectra indicated that the boron atoms have been doped into the diamond grains, and surplus boron carbide locate at the grain boundary. The hardness measurements reveal that the p-BDD doped with 1 at% and 23 at% boron atoms exhibit high hardness of 78.5 GPa and 45 GPa, respectively, which is equivalent to the hardness of single crystal diamond and cubic boron nitride. The p-BDD is a semiconductor and transforms into superconductive state below 2.5 K. According to microstructure measurements, highly dense p-BDD and B4C bonded diamond exhibit superhard behavior because of the strong bonding of diamond grains by B4C additives. The oxidation temperature of these p-BDD specimens is around 1538 K in the air, which is far higher than diamond. B4C is demonstrated as a superior additive to sinter superhard and electric conductive p-BDD, which are extremely useful in areas where high hardness and electric conductive are highly desired.
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