加速度计
材料科学
基质(水族馆)
光电子学
硅
氮化镓
异质结
外延
验证质量
微电子机械系统
加速度
氮化硅
高电子迁移率晶体管
纳米技术
晶体管
计算机科学
电气工程
物理
电压
工程类
地质学
操作系统
海洋学
图层(电子)
经典力学
作者
Christophe Morelle,D. Théron,Isabelle Roch‐Jeune,Pascal Tilmant,Étienne Okada,F. Vaurette,B. Grimbert,Joff Derluyn,Stefan Degroote,Marianne Germain,M. Faucher
摘要
We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a micro-electro-mechanical-system technology starting from an AlGaN/GaN heterostructure grown on silicon. The vibrating GaN beam has integrated high electron mobility transducers, whereas a high aspect ratio proof mass is engineered in the silicon substrate. The sensor response was investigated for several modes and features a scale factor up to 160 Hz/g, with unconventional dependence vs the mode number. To account for this, we propose an analytical model of the accelerometer scale factor that takes into account the built-in stress during epitaxy. This proof-of-concept device opens perspectives for inertial sensors taking advantage of GaN properties.
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