钻石
材料科学
光电子学
外延
肖特基势垒
化学气相沉积
图层(电子)
基质(水族馆)
肖特基二极管
薄脆饼
金刚石材料性能
蓝宝石
二极管
纳米技术
复合材料
光学
激光器
海洋学
物理
地质学
作者
Taemyung Kwak,Sanghun Han,Uiho Choi,Seong-Woo Kim,Okhyun Nam
标识
DOI:10.1016/j.diamond.2023.109750
摘要
We evaluated the performance of a diamond Schottky barrier diode (SBD) fabricated on a high-quality 7° off-axis heteroepitaxial (001) diamond substrate. The self-separated free-standing heteroepitaxial diamond substrate was grown on misoriented sapphire (α-Al2O3) with step-flow growth mode. It is Pseudo-vertical SBD with p + highly boron-doped epitaxial layer and 600 nm thin i-layer. The diamond SBDs showed high crystalline quality and excellent device performance. They exhibited a breakdown field strength of 2.1 MV·cm−1, which is the highest value ever reported for heteroepitaxial diamond SBDs. These results confirm the feasibility of realizing 2-inched wafer-scale diamonds in the field of power electronics.
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