High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography

Developing aluminium gallium nitride deep-ultraviolet (UVC) micro-light-emitting diodes (micro-LEDs) with sufficient power has been a challenge, which particularly limits these devices to various applications. However, advanced fabrication processes have been developed to enable the demonstration of highly efficient 270 nm UVC micro-LEDs and large-format UVC micro-LED displays with high resolution for maskless photolithography. Optical and electrical characterizations were performed on UVC micro-LEDs with sizes ranging from 3 µm to 100 μm to evaluate these emerging devices. The 3 μm device achieved a record-high peak external quantum efficiency of 5.7% and a maximum brightness of 396 W cm–2. Moreover, 2,540 pixels per inch parallel-connected UVC micro-LED arrays featuring rear-side reflection layers exhibited emission uniformity and collimation. UVC micro-LED displays, with a resolution of 320 × 140, were explicitly designed for maskless photolithography applications utilizing a customized integrated circuit driver for optimal performance. The UVC micro-LEDs and UVC micro-displays provide sufficient doses to fully expose the photoresist film within seconds, owing to their enhanced current spreading uniformity, improved heat dispersion and superior light extraction efficiency. This work may open a path to maskless photolithography, potentially leading to revolutionary developments in the semiconductor industry. Deep-ultraviolet micro-light-emitting diodes based on aluminium gallium nitride are fabricated for maskless photolithography. The peak wavelength is 270 nm, and the 3 μm device achieved a peak external quantum efficiency of 5.7% and a maximum brightness of 396 W cm–2.