反常光电效应
材料科学
应变工程
相变
范德瓦尔斯力
光伏系统
凝聚态物理
点反射
极化(电化学)
过渡金属
铁电性
光电子学
压电
光电效应
工程物理
纳米技术
背景(考古学)
化学物理
电子结构
格子(音乐)
晶体结构
激发极化
Crystal(编程语言)
半导体
作者
Sikandar Aftab,Arden L. Moore
标识
DOI:10.1002/advs.202514337
摘要
A promising method for producing photocurrents above the Shockley-Queisser limit in non-centrosymmetric materials is the bulk photovoltaic effect (BPVE), especially in low-dimensional materials. 2D transition metal dichalcogenides (2D TMDs) provide a unique platform for BPVE engineering because of their strong light-matter interactions, varied electronic phases, and tunable crystal symmetry. This review systematically examines how 2D TMDs can induce or improve BPVE through phase engineering and structural modification. Phase transitions (such as 2H → 1T/1T' and 2H → 3R) that break inversion symmetry and allow shift currents are discussed. Strain fields, van der Waals (vdWs) heterostructures, twisted bilayers, lattice distortions, and rolled morphologies are considered in the context of structural engineering, all of which modify symmetry and electronic structure to regulate BPVE. Large photocurrents can be driven by spontaneous polarization in piezoelectric and ferroelectric 2D materials, including single- and dual-polarization systems. Attention is also drawn to how the directionality of the polarization field, edge contacts, and depolarization fields affect the photovoltaic response. In this comprehensive review, Design guidelines and new approaches for improving BPVE in 2D TMD systems are presented, with ramifications for energy-harvesting and next-generation optoelectronic devices.
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