异质结
控制重构
材料科学
钙钛矿(结构)
光电子学
组分(热力学)
电荷(物理)
回流
GSM演进的增强数据速率
图层(电子)
电子
纳米技术
计算机科学
化学
物理
结晶学
地质学
嵌入式系统
电信
地貌学
热力学
量子力学
入口
作者
Zhi Fang,Minghui Shang,Yapeng Zheng,Qian Sun,Yang Xu,Xinmei Hou,Weiyou Yang
标识
DOI:10.1021/acs.jpclett.3c01303
摘要
Generally, the 2D CsPbI3 layer capping on 3D counterparts has been considered as an effective strategy for both enhancing photovoltaic efficiency and stability. However, the intrinsically poor out-of-plane charge transport through the 2D layer remarkably hinders the overall performance of solar devices. To overcome such a challenge, we report the rationally designed 3D-CsPbI3/2D-(PYn)PbI4 (n = 1-4) heterojunctions with desirable energy level matching. It is evidenced that the valence band (VB) edge reconfiguration would occur with the increase of n, accompanied by the VB maximum (VBM) of the 2D component moving down from the higher level above that of the 3D component to the underneath. Consequently, the as-constructed 3D/2D-(PYn)PbI4 (n = 1, 2) heterojunctions exhibit optimal energy level matching, with accelerated transport of holes from 3D to 2D component and limited backflow of electrons. These findings might provide some meaningful insights on the energy level matching in 3D/2D perovskite heterojunctions.
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