响应度
光电探测器
量子效率
纳米线
紫外线
材料科学
光电子学
碳化硅
暗电流
比探测率
灵敏度(控制系统)
探测器
光学
物理
电子工程
工程类
冶金
作者
Mustafa A. Yildirim,Kaşif Teker
标识
DOI:10.1016/j.jallcom.2021.159255
摘要
This paper reports a very fine-pattern, flexible, self-powered, and cost-effective silicon carbide single nanowire ultraviolet photodetector (SiCNW-UVPD) with a high sensitivity of 1756%, a responsivity of 0.17 A/W, and a shallow dark current of ~0.08 pA. The device exhibits an excellent detectivity value of 7.2 × 1010 cm.Hz1/2. W−1 and external quantum efficiency (EQE) of 83% without the need of any external power (0 V) under 254 nm ultraviolet light. The remarkable performance parameters having the highest reported sensitivity and responsivity values for a self-powered SiC nanowire-based photodetector along with very small size and cost-efficiency could offer unique opportunities in new generation, flexible, self-powered nanoscale optoelectronics.
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